rej03g1579-0100 rev.1.00 sep 03, 2007 page 1 of 7 H7N1004AB silicon n channel mos fet high speed power switching rej03g1579-0100 rev.1.00 sep 03, 2007 features ? low on-resistance r ds (on) =25 m ? typ. ? low drive current ? available for 4.5 v gate drive outline 1. gate 2. drain 3. sourc e 4. drain renesas package code: prss000 4ac-a (package name: to-220ab ) 1 2 3 4 d g s absolute maximum ratings (ta = 25c) item symbol value unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current i d 30 a drain peak current i d(pulse) note1 100 a body-drain diode reverse drain current i dr 30 a avalanche current i ap note2 15 a avalanche energy e ar note2 22.5 mj channel dissipation pch note3 50 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 ms, duty cycle 1% 2. value at tch = 25c, rg 50 ? 3. value at tc = 25c
H7N1004AB rej03g1579-0100 rev.1.00 sep 03, 2007 page 2 of 7 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 100 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss ? ? 10 a v ds = 100 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 ? 2.5 v i d = 1 ma, vds = 10 v note4 ? 25 35 m ? i d = 15 a, vgs = 10 v note4 static drain to source on state resistance r ds(on) ? 30 45 m ? i d = 15 a, vgs = 4.5 v note4 forward transfer admittance |y fs | 22 37 ? s i d = 15 a, vds = 10 v note4 input capacitance ciss ? 2800 ? pf output capacitance coss ? 240 ? pf reverse transfer capacitance crss ? 140 ? pf v ds = 10 v v gs = 0 f = 1 mhz total gate charge qg ? 50 ? nc gate to source charge qgs ? 9 ? nc gate to drain charge qgd ? 11 ? nc v dd = 50 v v gs = 10 v i d = 30 a turn-on delay time t d(on) ? 23 ? ns rise time t r ? 120 ? ns turn-off delay time t d(off) ? 70 ? ns fall time t f ? 9.5 ? ns v gs = 10 v, i d = 15 a r l = 2 ? rg = 4.7 ? body-drain diode forward voltage v df ? 0.9 ? v i f = 30 a, v gs = 0 body-drain diode reverse recovery time t rr ? 47 ? ns i f = 30 a, v gs = 0 di f /dt = 100 a/ s
H7N1004AB rej03g1579-0100 rev.1.00 sep 03, 2007 page 3 of 7 main characteristics drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 50 40 30 20 10 0 50 40 30 20 10 0 012345 tc = ?25c 25c 75c 50 10 2 0.2 0.1 0.05 0.02 100 20 5 0.5 1 0.1 0.3 1 3 10 30 100 300 1000 v ds = 10 v pulse test 200 operation in this area is limited by r ds (on) 80 0 0 20 40 60 50 100 150 200 channel dissipation pch (w) case temperature tc (c) power vs. temperature derating gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage drain current i d (a) drain to source on state resistance r ds (on) (m ? ) static drain to source on state resistance vs. drain current 1.0 0.8 0.4 0.6 0.2 0 0 5 10 15 20 20 100 200 10 50 5 pulse test i d = 20 a 5 a 10 a 15 50 21020 100 500 v gs = 4.5 v 10 v pulse test 1 ms 100 s 10 s 02468 10 10 v 6 v 4 v pulse test v gs = 3 v 3.5 v ta = 25c pw = 10 ms (1 shot) dc operation (tc = 25c)
H7N1004AB rej03g1579-0100 rev.1.00 sep 03, 2007 page 4 of 7 case temperature tc (c) static drain to source on state resistance r ds (on) (m ? ) static drain to source on state resistance vs. temperature forward transfer admittance |y fs | (s) drain current i d (a) forward transfer admittance vs. drain current 100 ?25 0 25 75 50 125 100 150 0 20 40 60 80 i d = 20 a i d = 20 a 5, 10 a 5, 10 a v gs = 4.5 v v gs = 10 v pulse test 0.01 1 10 100 0.1 100 1 0.1 10 0.01 tc = ?25c v ds = 10 v pulse test 75c 25c capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 01020304050 10000 2000 5000 1000 500 100 20 200 50 10 ciss coss crss v gs = 0 f = 1 mhz 200 160 120 80 40 0 0 20 16 12 8 4 20 40 60 80 100 0 i d = 30 a v gs v ds v dd = 100 v 50 v 25 v v dd = 25 v 50 v 100 v gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 0.1 0.2 1 2 10 20 0.5 5 50 100 100 20 50 10 di / dt = 100 a / s v gs = 0, ta = 25c drain current i dr (a) reverse recovery time t rr (ns) static drain to source on state resistance vs. drain current 300 30 10 3 0.1 0.3 10 100 3 drain current i d (a) switching time t (ns) switching characteristics 130 1000 100 1 t r t d(on) t d(off) t f v gs = 10 v, v dd = 30 v pw = 5 s, duty 1 % r g = 4.7 ?
H7N1004AB rej03g1579-0100 rev.1.00 sep 03, 2007 page 5 of 7 avalanche test circuit avalanche waveform 0 i d v ds i ap v (br)dss v dd e ar = l i ap 2 2 1 v dss v dss ? v dd d.u.t rg i ap monitor v ds monitor v dd 50 ? vin 15 v l source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage channel temperature tch (c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating 40 25 50 75 100 125 150 0 8 16 24 32 i ap = 15 a v dd = 50 v duty < 0.1 % rg 50 ? 0 0 10 20 30 40 0.4 0.8 1.2 1.6 2.0 v gs = 0, ?5 v 50 pulse test pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 tc = 25c d = 1 0.5 0.2 0.1 0.05 0.01 0 .02 p dm pw t d = pw t ch ? c (t) = s (t) ch ? c ch ? c = 2.5 c/w, tc = 25 c 10 v 5 v 1 shot pulse
H7N1004AB rej03g1579-0100 rev.1.00 sep 03, 2007 page 6 of 7 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit switching time waveform vin monitor d.u.t. vin 10 v r l vout monitor rg v ds = 30 v
H7N1004AB rej03g1579-0100 rev.1.00 sep 03, 2007 page 7 of 7 package dimensions 0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?0.1 3.6 +0.1 ?0.08 previous code prss0004ac-a to-220ab / to-220abv mass[typ.] 1.8g sc-46 renesas code jeita package code unit: mm package name to-220ab
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